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Биполярный транзистор 2SD718 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD718
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 6 MHz
Ёмкость коллекторного перехода (Cc): 170 pf
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора: TO247
2SD718 Datasheet (PDF)
0.1. 2sd718.pdf Size:106K _utc
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage Get big gameshome.
0.2. 2sd718.pdf Size:118K _mospec
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0.3. 2sd718 to3p.pdf Size:252K _first_silicon
SEMICONDUCTOR2SD718TECHNICAL DATANPN EPITAXIAL SILICON TRANSISTORHIGH POWER AMPLIFIER APPLICATIONFEATURES *Recommended for 45~50W Audio Frequency Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNIT Collector- VCBO 120 V Base Voltage Collector- VCEO 120 V Emitte
0.4. 2sd718.pdf Size:218K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicati
Другие транзисторы.. 2SD713, 2SD715, 2SD716, 2SD716O, 2SD716R, 2SD717, 2SD717O, 2SD717Y, TIP31C, 2SD718O, 2SD718R, 2SD72, 2SD720, 2SD721, 2SD722, 2SD723, 2SD724.
Список транзисторов
Обновления
BJT: CD551B | YTS2907A | YTS2906A | YTS2907 | YTS2906 | YTS4403 | YTS4402 | YTS4126 | YTS4125 | YTS3906 | YTS3905 | YTS2222A | YTS2221A | YTS2222 | YTS2221 | YTS4401 | YTS4400 | YTS4124 | YTS4123 | YTS3904 | YTS3903
Type Designator: KTD718
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 55
Harga Mosfet D718
Noise Figure, dB: -
Package: TO3P
Work paceteach to be happy. KTD718 Transistor Equivalent Substitute - Cross-Reference Search
KTD718 Datasheet (PDF)
0.1. ktd718.pdf Size:76K _kec
SEMICONDUCTOR KTD718TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.A Q BKFEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage.DIM MILLIMETERS Complementary to KTB688.A 15.9 MAXB 4.8 MAX_C 20.0 + 0.3_D 2.0 + 0.3Dd 1.0+0.3/-0.25E 2.0F 1.0MAXIMUM RATING (Ta=25 )G 3.3 MAXdH 9.0CHARACTERISTIC SYMBOL RAT
0.2. ktd718b.pdf Size:442K _kec
SEMICONDUCTOR KTD718BTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH POWER AMPLIFIER APPLICATION.AQ BNFEATURES O KRecommended for 45 50W Audio Frequency Amplifier Output Stage.DIM MILLIMETERSComplementary to KTB688B. _A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20+_d +1.00 0.20_E +3.00 0.20_F 3.80 + 0.20D_G 3.50 + 0.20E_
Datasheet: KTD2060, KTD2061, KTD2066, KTD2092, KTD2424, KTD3055, KTD525, KTD686, 2SC1815, KTD863, KTD998, KTN2222, KTN2222A, KTN2222AS, KTN2222S, KTN2369, KTN2369A.
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Mosfet D718 Transistor Circuit
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BJT: CD551B | YTS2907A | YTS2906A | YTS2907 | YTS2906 | YTS4403 | YTS4402 | YTS4126 | YTS4125 | YTS3906 | YTS3905 | YTS2222A | YTS2221A | YTS2222 | YTS2221 | YTS4401 | YTS4400 | YTS4124 | YTS4123 | YTS3904 | YTS3903